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| IRFPG30PBF资料 | |
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IRFPG30PBF PDF Download |
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File Size : 116 KB
Manufacturer:IR Description: There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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| 相关型号 | |
| ◆ STM32F107VCT6 | |
| ◆ AS3911-BQFT | |
| ◆ ADG919BCPZ | |
| ◆ MC9S12XEP100MAL | |
| ◆ MC9S12DT128MPV | |
| ◆ ATMEGA2560-16AU | |
| ◆ FM25640B-GA | |
| ◆ IRFPG30PBF | |
| ◆ AFE4400RHAR | |
| ◆ STM32F103RBT6 | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：IRFPG30PBF 厂 家：IR 封 装：IR 批 号：18+ 数 量：1508 说 明： 产品种类：MOSFET 晶体管极性：N-Channel 汲极/源极击穿电压：1000 V 闸/源击穿电压：+/- 20 V 漏极连续电流：3.1 A 导通电阻：5 Ohms 配置：Single 最大工作温度：+ 150 C 安装风格：Through Hole 封装 / 箱体：TO-247AC 封装：Tube 商标：Vishay / Siliconix 下降时间：29 ns 最小工作温度：- 55 C 功率耗散：125 W 上升时间：24 ns 工厂包装数量：25 典型关闭延迟时间：89 ns |
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运 费：99元包邮 所在地：深圳 新旧程度：全新原装 |
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| 联系人：Eason Zhu |
| 电 话：0755/82720717,18682488968 |
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